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IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (4)
70P258/248
Ind'l Only
Symbol
Parameter
Min.
Max.
Unit
READ CYCLE
t RC
t AA
Read Cycle Time
Address Access Time
55
____
____
55
ns
ns
t ACE
t ABE
Chip Enable Access Time
Byte Enable Access Time
(3)
(3)
____
____
55
55
ns
ns
t AOE
t OH
Output Enable Access Time (3)
Output Hold from Address Change
____
5
30
____
ns
ns
t LZ
Output Low-Z Time
(1,2,5)
5
____
ns
t HZ
Output High-Z Time
(1,2,5)
____
25
ns
t PU
Chip Enable to Power Up Time
(1,2)
0
____
ns
t PD
Chip Disable to Power Down Time
(1,2)
____
55
ns
t SOP
t SAA
Semaphore Flag Update Pulse ( OE or SEM )
Semaphore Address Access (3)
15
____
____
55
ns
ns
NOTES:
5675 tbl 11
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load.
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = V IL , UB or LB = V IL , and SEM = V IH. To access semaphore, CE = V IH or UB and LB = V IH , and SEM = V IL .
4. The specification for t DH must be met by the device supplying write data to the SRAM under all operating conditions. Although t DH and t OW values will vary over
voltage and temperature, the actual t DH will always be smaller than the actual t OW .
5. At any given temperature and voltage condition, t HZ is less than t LZ for any given device.
8
6.42
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